1, auala e aveese ai masini
Mechanical striping method is a method to get graphene thin-layer materials by using the friction and relative motion between objects and graphene. O le auala e faigofie ona faʻaogaina, ma o le graphene maua e masani lava ona tausia se fausaga tioata atoatoa. I le 2004, e to'alua saienitisi Peretania na fa'aogaina le lipine manino e pa'u ese ai le graphite fa'ale-natura i luga o le laulau e maua ai le graphene, lea na fa'avasegaina fo'i o le auala e ta'e ai masini. O lenei metotia na manatu muamua e le lelei ma le mafai ona gaosia tele.
I tausaga talu ai nei, ua faia e le alamanuia le tele o suʻesuʻega ma atinaʻe fou i le gaosiga o metotia o le graphene. I le taimi nei, o le tele o kamupani i Xiamen, Guangdong ma isi itumalo ma aai ua manumalo i le gaosiga bottleneck o le maualalo-tau tele-fua saunia o graphene, faʻaaogaina auala faʻainisinia e gaosia ai le graphene ma le tau maualalo ma le maualuga.
2. Redox auala
Oxidation-reduction method is to oxidize natural graphite by using chemical reagents such as sulfuric acid and nitric acids and oxidants such as potassium permanganate and hydrogen peroxide, faateleina le va i le va o graphite layers, ma faaofi oxides i le va o graphite layers e saunia ai le GraphiteOxide. Ona fufulu lea o le reactant i le vai, ma faʻamago le mama mama i le maualalo o le vevela e saunia ai le graphite oxide pauta. O le graphene oxide na saunia e ala i le pa'u o le graphite oxide e ala i le pa'u tino ma le fa'alauteleina o le vevela. Mulimuli ane, o le graphene oxide na faʻaititia e ala i vailaʻau e maua ai le graphene (RGO). O lenei metotia e faigofie ona faʻaogaina, e maualuga le fua, ae maualalo le lelei o oloa [13]. Oxidation-reduction method e faʻaaogaina ai vailaʻau malosi e pei o le sulfuric acid ma le nitric acid, lea e matautia ma e manaʻomia ai le tele o vai mo le faʻamamaina, lea e aumaia ai le tele o le faʻaleagaina o le siosiomaga.
Graphene saunia e ala redox o loʻo i ai vaega faʻaogaina o le okesene ma e faigofie ona suia. Ae peitaʻi, pe a faʻaitiitia le graphene oxide, e faigata ona pulea le okesene o le graphene pe a uma ona faʻaitiitia, ma o le graphene oxide o le a faʻaitiitia pea i lalo o le aafiaga o le la, maualuga le vevela i totonu o le taavale ma isi mea i fafo, o lea o le lelei o oloa graphene. gaosia e ala redox e masani ona le ogatasi mai lea vaega i lea vaega, lea e faigata ai ona pulea le lelei.
I le taimi nei, e toʻatele tagata faʻafememeaʻi manatu o le graphite oxide, graphene oxide ma le faʻaitiitia o le graphene oxide. O le kafite oxide e lanu enaena ma o se polymer o le kalafi ma le oxide. O le graphene oxide o se oloa e maua mai i le paʻu o le graphite oxide i se laulau e tasi, o se laulau lua poʻo se oligo layer, ma o loʻo i ai se numera tele o vaega o loʻo i ai le okesene, o le mea lea o le graphene oxide e le faʻaaogaina ma o loʻo i ai mea aoga, lea o le a faʻaitiitia ai pea. ma faamatuu atu kasa e pei ole sulfur dioxide a'o fa'aoga, aemaise ile taimi ole gaosiga ole mea vevela maualuga. O le oloa pe a uma ona faʻaitiitia le graphene oxide e mafai ona taʻua o le graphene (faʻaitiitia le graphene oxide).
3. (silicon carbide) SiC epitaxial auala
SiC epitaxial method is to sublimate silicon atoms mai mea ma toe fausia le totoe C atoms e ala i le faʻapotopotoina e le tagata lava ia i le ultra-high vacuum ma le maualuga o le vevela siosiomaga, ma maua ai le graphene e faʻavae i luga ole SiC substrate. E mafai ona maua le graphene maualuga i lenei metotia, ae o lenei metotia e manaʻomia ai meafaigaluega maualuga.
Taimi meli: Ian-25-2021